Research (brief topics)

    The Group specialises in study of behaviour of materials (semiconductors, semiconductor structures, metals, insulators, etc.) at ultrahigh pressure conditions.

Topics Comments
Electronic properties of semiconductors at high pressure (experiment)
  • electrical resistance
  • thermoelectric power
  • magnetoresistance
  • longitudinal and transverse Nernst-Ettingshausen effects at high hydrostatic (up to 2.3 GPa) and ultrahigh quasihydrostatic (up to 30 GPa) pressures
Phase transitions investigation (experiment)
  • Electronic and structural transitions accompanying by change of electric properties
Properties of heterophase states in vicinity of phase transitions; design of composite materials (calculations and experimental)
  • properties of heterophase states as function of concentration and geometrical configuration of phase inclusions
  • improvement of thermoelectric effectiveness and figure of merit
Development of novel high-pressure characterisation techniques (experiment)
  • Automated setups allowing to measure simultaneously several parameters of a sample and environment

    Also, in collaboration with other laboratories and institutions the following techniques are accessible:
  1. Structural investigations at ambient and high pressure (experiment)
  2. Optical Spectroscopy at ambient and high pressure (experiment)
  3. Irradiation of semiconductors by high energy particles (experiment)
  4. X-ray Emission Spectroscopy (experiment)

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